Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage

This paper investigates the punch-through phenomenon in SiC Schottky Barrier Diodes (SBD) from capacitance–voltage (C–V) characteristics at high reverse bias voltage. High voltage bias application has not been possible by conventional measurement instrumentation. The authors, therefore, develop C–V characteristics measurement instrumentation which enables the application of high dc bias voltages on SiC-SBD up to the rated reverse blocking voltage. The measurement is then validated through the comparison of results from different measurement methods. The proposed methods clearly reveal the punch-through phenomenon of measured SiC-SBD, and enable the extraction of pertinent parameters for device modeling.